Planarized Si N x /spin-on-glass photonic crystal organiclight-emitting diodes

• Published in: Applied physics letters 2006-10, Vol.89 (17), p.173502-173502-3
• Main Authors: Kim, Yoon-Chang, Cho, Sang-Hwan, Song, Young-Woo, Lee, Yong-Jae, Lee, Yong-Hee, Do, Young Rag
• Format: Article
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2364160

The light extraction characteristics of low-index spin-on-glass (SOG)-assisted, planarized photonic crystal organic light-emitting diodes (PC OLEDs) are reported. The light extraction efficiencies of planarized two-dimensional (2D) Si N x ∕ SOG PC OLEDs (type II) and 2D Si N x ∕ SOG PC OLEDs with an additional high-index Si N x layer (type III) are significantly better under typical operating conditions than those of the first generation of 2D Si O 2 ∕ Si N x PC OLEDs (type I). The enhancements in the extraction efficiencies of type-II and type-III PC OLEDs are about 63% and 85%, respectively, with respect to those of conventional OLEDs with indium tin oxide layers of identical thicknesses. These improvements in extraction efficiencies are attributed not only to the liberation of the photons trapped in the high-index guiding layer but also to a reduction in the surface plasmon contribution.