Experimental evaluation of impact ionization coefficients in Al x Ga 1 − x N based avalanche photodiodes

The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky b...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-11, Vol.89 (18), p.183524-183524-3
Main Authors: Tut, Turgut, Gokkavas, Mutlu, Butun, Bayram, Butun, Serkan, Ulker, Erkin, Ozbay, Ekmel
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2385216