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Estimation of optimum density and temperature for maximum efficiencyof tin ions in Z discharge extreme ultraviolet sources
Extreme ultraviolet (EUV) discharge-based lamps for EUV lithography need to generate extremely high power in the narrow spectrum band of 13.5 ± 0.135 nm . A simplified collisional-radiative model and radiative transfer solution for an isotropic medium were utilized to investigate the wavelength-inte...
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Published in: | Journal of applied physics 2007-02, Vol.101 (3), p.033306-033306-9 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Extreme ultraviolet (EUV) discharge-based lamps for EUV lithography need to generate extremely high power in the narrow spectrum band of
13.5
±
0.135
nm
. A simplified collisional-radiative model and radiative transfer solution for an isotropic medium were utilized to investigate the wavelength-integrated light outputs in tin (Sn) plasma. Detailed calculations using the Hebrew University-Lawrence Livermore atomic code were employed for determination of necessary atomic data of the
Sn
4
+
to
Sn
13
+
charge states. The result of model is compared with experimental spectra from a Sn-based discharge-produced plasma. The analysis reveals that considerably larger efficiency compared to the so-called efficiency of a black-body radiator is formed for the electron density
≃
10
18
cm
−
3
. For higher electron density, the spectral efficiency of Sn plasma reduces due to the saturation of resonance transitions. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.2434987 |