Photoluminescence from low temperature grown In As ∕ Ga As quantum dots

The authors investigated a set of self-assembled In As ∕ Ga As quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 ° C ) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to th...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-03, Vol.90 (11), p.112109-112109-3
Main Authors: Sreenivasan, D., Haverkort, J. E. M., Eijkemans, T. J., Nötzel, R.
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors investigated a set of self-assembled In As ∕ Ga As quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 ° C ) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2713803