Terahertz luminescence in strained GaAsN:Be layers under strongelectric fields

The authors report on the experimental studies of terahertz emission from strained Ga As N ∕ Ga As microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spo...

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Published in:Applied physics letters 2007-04, Vol.90 (16), p.161128-161128-3
Main Authors: Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Yu, Sofronov, A. N., Andrianov, A. V., Zakhar'in, A. O., Egorov, A. Yu, Gladyshev, A. G., Bondarenko, O. V., Ustinov, V. M., Zinov'ev, N. N., Kozlov, D. V.
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Summary:The authors report on the experimental studies of terahertz emission from strained Ga As N ∕ Ga As microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spontaneous optical transitions between resonant and localized states of the acceptor. The energy spectrum calculated for the Be acceptor in the Ga As N ∕ Ga As heterostructure fits reasonably well with the experimentally observed peaks.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2730745