Electrical and deep-level characterization of GaP 1 − x N x grown by gas-source molecular beam epitaxy

• Published in: Journal of applied physics 2007-05, Vol.101 (10), p.103707-103707-5
• Main Authors: Kaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W.
• Format: Article
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2732451

We have investigated electrical properties and deep levels of n -GaP 1 − x N x ( x = 0 % − 0.62 % ) grown on (100) n -GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm − 1 , originating from alloy disorder or local distortion of the GaP 1 − x N x lattice. The electrical properties of the GaP 1 − x N x surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10-1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni ∕ GaP 1 − x N x diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84 ± 4 meV in GaP and GaP 1 − x N x . For the GaP 1 − x N x samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes.