Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si

• Published in: Applied physics letters 2007-06, Vol.90 (25), p.253111-253111-3
• Main Authors: Lu, Kuo-Chang, Tu, K. N., Wu, W. W., Chen, L. J., Yoo, Bong-Young, Myung, Nosang V.
• Format: Article
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2750530

Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out in situ in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal Ni Si ∕ Si ∕ Ni Si heterostructures of atomically sharp interfaces for nanoscale devices.