Loading…
Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si
Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out in situ in an ultrahigh vacuum transmission electron microscope....
Saved in:
| Published in: | Applied physics letters 2007-06, Vol.90 (25), p.253111-253111-3 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | |
|---|---|
| cites | cdi_FETCH-scitation_primary_10_1063_1_2750530Point_contact_reacti3 |
| container_end_page | 253111-3 |
| container_issue | 25 |
| container_start_page | 253111 |
| container_title | Applied physics letters |
| container_volume | 90 |
| creator | Lu, Kuo-Chang Tu, K. N. Wu, W. W. Chen, L. J. Yoo, Bong-Young Myung, Nosang V. |
| description | Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out
in situ
in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal
Ni
Si
∕
Si
∕
Ni
Si
heterostructures of atomically sharp interfaces for nanoscale devices. |
| doi_str_mv | 10.1063/1.2750530 |
| format | article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_2750530Point_contact_reacti</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_2750530Point_contact_reacti3</originalsourceid><addsrcrecordid>eNqlT0tuwjAQtVCRSIEFN5gLJJ2JFQIbNlWrrlClsrdMcMAIbGRbTXuDXqAX7ElwPjfoZp7eaN578xhbEGaES_5EWV4WWHAcsYSwLFNOtHpgCSLydLkuaMIevT9HWuScJ-z6brUJUFkTZBXAqTi1NR72KjRKGdhqkOYAHxqMNLbRTvlu0V9-KlA3HeSXlhc4OtuEE9gaet4K0tYgiv9-fiPM2LiWF6_mA07Z5vVl9_yW-iqatMHi5vRVum9BKNpCgsRQqHtUDI-KPp7_2-AOC-5iAA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Lu, Kuo-Chang ; Tu, K. N. ; Wu, W. W. ; Chen, L. J. ; Yoo, Bong-Young ; Myung, Nosang V.</creator><creatorcontrib>Lu, Kuo-Chang ; Tu, K. N. ; Wu, W. W. ; Chen, L. J. ; Yoo, Bong-Young ; Myung, Nosang V.</creatorcontrib><description>Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out
in situ
in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal
Ni
Si
∕
Si
∕
Ni
Si
heterostructures of atomically sharp interfaces for nanoscale devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2750530</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-06, Vol.90 (25), p.253111-253111-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2750530Point_contact_reacti3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2750530$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,778,780,791,27903,27904,76130</link.rule.ids></links><search><creatorcontrib>Lu, Kuo-Chang</creatorcontrib><creatorcontrib>Tu, K. N.</creatorcontrib><creatorcontrib>Wu, W. W.</creatorcontrib><creatorcontrib>Chen, L. J.</creatorcontrib><creatorcontrib>Yoo, Bong-Young</creatorcontrib><creatorcontrib>Myung, Nosang V.</creatorcontrib><title>Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si</title><title>Applied physics letters</title><description>Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out
in situ
in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal
Ni
Si
∕
Si
∕
Ni
Si
heterostructures of atomically sharp interfaces for nanoscale devices.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlT0tuwjAQtVCRSIEFN5gLJJ2JFQIbNlWrrlClsrdMcMAIbGRbTXuDXqAX7ElwPjfoZp7eaN578xhbEGaES_5EWV4WWHAcsYSwLFNOtHpgCSLydLkuaMIevT9HWuScJ-z6brUJUFkTZBXAqTi1NR72KjRKGdhqkOYAHxqMNLbRTvlu0V9-KlA3HeSXlhc4OtuEE9gaet4K0tYgiv9-fiPM2LiWF6_mA07Z5vVl9_yW-iqatMHi5vRVum9BKNpCgsRQqHtUDI-KPp7_2-AOC-5iAA</recordid><startdate>20070621</startdate><enddate>20070621</enddate><creator>Lu, Kuo-Chang</creator><creator>Tu, K. N.</creator><creator>Wu, W. W.</creator><creator>Chen, L. J.</creator><creator>Yoo, Bong-Young</creator><creator>Myung, Nosang V.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20070621</creationdate><title>Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si</title><author>Lu, Kuo-Chang ; Tu, K. N. ; Wu, W. W. ; Chen, L. J. ; Yoo, Bong-Young ; Myung, Nosang V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2750530Point_contact_reacti3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Kuo-Chang</creatorcontrib><creatorcontrib>Tu, K. N.</creatorcontrib><creatorcontrib>Wu, W. W.</creatorcontrib><creatorcontrib>Chen, L. J.</creatorcontrib><creatorcontrib>Yoo, Bong-Young</creatorcontrib><creatorcontrib>Myung, Nosang V.</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Kuo-Chang</au><au>Tu, K. N.</au><au>Wu, W. W.</au><au>Chen, L. J.</au><au>Yoo, Bong-Young</au><au>Myung, Nosang V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si</atitle><jtitle>Applied physics letters</jtitle><date>2007-06-21</date><risdate>2007</risdate><volume>90</volume><issue>25</issue><spage>253111</spage><epage>253111-3</epage><pages>253111-253111-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out
in situ
in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal
Ni
Si
∕
Si
∕
Ni
Si
heterostructures of atomically sharp interfaces for nanoscale devices.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2750530</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-06, Vol.90 (25), p.253111-253111-3 |
| issn | 0003-6951 1077-3118 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2750530Point_contact_reacti |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
| title | Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano- Ni Si ∕ Si |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A15%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Point%20contact%20reactions%20between%20Ni%20and%20Si%20nanowires%20and%20reactive%20epitaxial%20growth%20of%20axial%20nano-%20Ni%20Si%20%E2%88%95%20Si&rft.jtitle=Applied%20physics%20letters&rft.au=Lu,%20Kuo-Chang&rft.date=2007-06-21&rft.volume=90&rft.issue=25&rft.spage=253111&rft.epage=253111-3&rft.pages=253111-253111-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2750530&rft_dat=%3Cscitation%3Eapl%3C/scitation%3E%3Cgrp_id%3Ecdi_FETCH-scitation_primary_10_1063_1_2750530Point_contact_reacti3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |