Effect of ionization potential change in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) on the performanceof polymer light emitting diodes due to its reaction with indium tin oxide

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is usually used to facilitate hole injection in polymer light emitting diodes. The authors used ultraviolet photoelectron spectroscopy to investigate ionization potential (IP) changes of PEDOT:PSS spin coated on indium tin oxide...

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Published in:Applied physics letters 2007-09, Vol.91 (10), p.103514-103514-3
Main Authors: Chang, Chih-Hao, Chen, Show-An
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Summary:Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is usually used to facilitate hole injection in polymer light emitting diodes. The authors used ultraviolet photoelectron spectroscopy to investigate ionization potential (IP) changes of PEDOT:PSS spin coated on indium tin oxide (ITO), and found that increasing delay time to baking after spin coating decreases its IP and increases hole injection barrier to emitting polymer. The IP change is attributed to dedoping of PEDOT in PEDOT:PSS due to reaction of ITO with protons in PSS and those in doped PEDOT in the presence of water. To get good performance of bipolar device, PEDOT:PSS film should be baked right after spin coating.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2759474