Modified atomic layer deposition of Ru O 2 thin filmsfor capacitor electrodes

The authors investigated the modified atomic layer deposition (ALD) of Ru O 2 films using bis(ethylcyclopentadienyl)ruthenium [ Ru ( Et Cp ) 2 ] at a deposition temperature of 265 ° C . Oxygen gas diluted with argon was supplied throughout all of the ALD steps. The growth rate of the modified ALD Ru...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (5), p.052908-052908-3
Main Authors: Kim, Jin-Hyock, Kil, Deok-Sin, Yeom, Seung-Jin, Roh, Jae-Sung, Kwak, Noh-Jung, Kim, Jin-Woong
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Summary:The authors investigated the modified atomic layer deposition (ALD) of Ru O 2 films using bis(ethylcyclopentadienyl)ruthenium [ Ru ( Et Cp ) 2 ] at a deposition temperature of 265 ° C . Oxygen gas diluted with argon was supplied throughout all of the ALD steps. The growth rate of the modified ALD Ru O 2 was about 1.4 Å ∕ cycle , which is higher than that of conventional Ru ALD due to the increase in the amount of Ru ( Et Cp ) 2 adsorption per cycle, as well as the difference in the unit cell volumes of Ru and Ru O 2 . The film thickness increased linearly with the number of cycles, and the incubation cycle in the initial stage was negligible.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2767769