Nonvolatile memory devices with Cu 2 S and Cu-Pc bilayered films

An organic bistable device with a structure Cu ∕ Cu 2 S /copperphthalocyanine ( Cu - Pc ) ∕ Pt was fabricated. Compared to the single layer organic device composed of Cu ∕ Cu - Pc ∕ Pt , the bilayer devices were observed to show distinct bistability with the resistance ratio of the off/on states up...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (7), p.073511-073511-3
Main Authors: Chen, Liang, Xia, Yidong, Liang, Xuefei, Yin, Kuibo, Yin, Jiang, Liu, Zhiguo, Chen, Yong
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Summary:An organic bistable device with a structure Cu ∕ Cu 2 S /copperphthalocyanine ( Cu - Pc ) ∕ Pt was fabricated. Compared to the single layer organic device composed of Cu ∕ Cu - Pc ∕ Pt , the bilayer devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 10 7 and low switch voltage ( 0.75 - 0.85 V ) . At least 10 5 switching cycles were achieved in the "write-read-erase-read" cycle voltage. The filament mechanism for the device is supported by the "metallic" behavior in their temperature dependence of the resistance in the on state. Such a memory device provides a promising structure for the nonvolatile memory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2771064