Optimization of electrical characteristics of Ti O 2 -incorporated Hf O 2 n -type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Structural approach of Ti O 2 -incorporated Hf O 2 multimetal dielectric n -type doped gallium arsenide ( n - Ga As ) metal oxide semiconductor capacitors and their electrical characteristics are investigated. Top Ti O 2 with bottom Hf O 2 bilayer dielectric shows excellent C - V characteristics and...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (8), p.082908-082908-3
Main Authors: Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C.
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Structural approach of Ti O 2 -incorporated Hf O 2 multimetal dielectric n -type doped gallium arsenide ( n - Ga As ) metal oxide semiconductor capacitors and their electrical characteristics are investigated. Top Ti O 2 with bottom Hf O 2 bilayer dielectric shows excellent C - V characteristics and the lowest hysteresis. Scaling down of this Ti O 2 ∕ Hf O 2 dielectric results in substantial reduction in hysteresis and equivalent oxide thickness compared to Hf O 2 dielectric. Reduced hysteresis is believed to be due to lower trap density of Ti O 2 than Hf O 2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2775048