Epitaxial growth of M -type Ba-hexaferrite films on MgO ( 111 ) || Si C (0001) with low ferromagnetic resonance linewidths

Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6 H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous Ba Fe 12 O 19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and subs...

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Published in:Applied physics letters 2007-10, Vol.91 (18), p.182505-182505-3
Main Authors: Chen, Zhaohui, Yang, Aria, Gieler, Antone, Harris, V. G., Vittoria, C., Ohodnicki, P. R., Goh, K. Y., McHenry, M. E., Cai, Zhuhua, Goodrich, Trevor L., Ziemer, Katherine S.
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Summary:Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6 H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous Ba Fe 12 O 19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe , a magnetization (as 4 π M s ) of 4.4 kG , and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe , thus demonstrating sufficient properties for microwave device applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2794011