Stimulated emission and lasing from an Al 0.13 Ga 0.87 N ∕ Ga N double heterostructure grown on a silicon substrate

Stimulated emission and laser action with well developed longitudinal optical modes from an Al 0.13 Ga 0.87 N ∕ Ga N double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelet...

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Published in:Applied physics letters 2008-01, Vol.92 (2), p.021118-021118-3
Main Authors: Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J.
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Summary:Stimulated emission and laser action with well developed longitudinal optical modes from an Al 0.13 Ga 0.87 N ∕ Ga N double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temperature with well resolved Fabry-Pérot modes at a wavelength as short as 368 nm at room temperature. A clear threshold was observed in the plot of the emission intensity versus the pumping power at both 77 K and room temperature. The effective index of refraction during laser operation was measured to be 2.65.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2819614