Substrate removal for high quantum efficiency back side illuminated type-II In As ∕ Ga Sb photodetectors

A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II In As ∕ Ga Sb superlattice photodetectors. After etching of the GaSb substrate with a Cr O 3 based solution, the quantum efficiency of the diodes presents F...

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Bibliographic Details
Published in:Applied physics letters 2007-12, Vol.91 (23), p.231106-231106-3
Main Authors: Delaunay, Pierre-Yves, Nguyen, Binh Minh, Hofman, Darin, Razeghi, Manijeh
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Summary:A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II In As ∕ Ga Sb superlattice photodetectors. After etching of the GaSb substrate with a Cr O 3 based solution, the quantum efficiency of the diodes presents Fabry-Pérot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μ m . The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2821834