10 6 years extrapolated hole storage time in Ga Sb ∕ Al As quantum dots

A thermal activation energy of 710 meV for hole emission from In As ∕ Ga As quantum dots (QDs) across an Al 0.9 Ga 0.1 As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude long...

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Bibliographic Details
Published in:Applied physics letters 2007-12, Vol.91 (24), p.242109-242109-3
Main Authors: Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N.
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Summary:A thermal activation energy of 710 meV for hole emission from In As ∕ Ga As quantum dots (QDs) across an Al 0.9 Ga 0.1 As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory (DRAM) refresh time. The dependence of the hole storage time in different III-V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k ⋅ p theory. A storage time of about 10 6 years in Ga Sb ∕ Al As QDs is extrapolated, sufficient for a QD-based nonvolatile (flash) memory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2824884