Carrier distribution in ( 0001 ) In Ga N ∕ Ga N multiple quantum welllight-emitting diodes

We study the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes. Conventional wisdom would assume that a large number of QWs lead to a smaller carrier density per QW, enabling efficient carrier recombination at high currents. We use angle-resolved far-field measurement...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (5), p.053502-053502-3
Main Authors: David, Aurélien, Grundmann, Michael J., Kaeding, John F., Gardner, Nathan F., Mihopoulos, Theodoros G., Krames, Michael R.
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Summary:We study the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes. Conventional wisdom would assume that a large number of QWs lead to a smaller carrier density per QW, enabling efficient carrier recombination at high currents. We use angle-resolved far-field measurements to determine the location of spontaneous emission in a series of multi-QW samples. They reveal that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high-power devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2839305