Effect of interstitial C incorporation on the Raman scatteringof Si 1 − x − y Ge x C y epitaxial layer

We performed Raman spectroscopy on the Si 1 − x − y Ge x C y epitaxial layers grown on Si substrates by ultrahigh vacuum chemical vapor deposition. The incorporation of substitutional C atoms reduces the Si-Si mode frequency of Si 1 − x − y Ge x C y , whereas the interstitial C incorporation shifts...

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Published in:Applied physics letters 2008-02, Vol.92 (6), p.061906-061906-3
Main Authors: Choi, Suk, Kim, Hyun Woo, Kim, Hee Jin, Hong, Sukwon, Lee, Gun-Do, Yoon, Euijoon
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Summary:We performed Raman spectroscopy on the Si 1 − x − y Ge x C y epitaxial layers grown on Si substrates by ultrahigh vacuum chemical vapor deposition. The incorporation of substitutional C atoms reduces the Si-Si mode frequency of Si 1 − x − y Ge x C y , whereas the interstitial C incorporation shifts it up. The ab initio phonon frequency calculation considering the most stable interstitial C site was performed to verify our results and we showed that the V-shaped behavior, showing the decrease and increase of Si-Si mode frequency as the amount of C, originated from the effect of interstitial C incorporation and proposed that the Si-Si Raman vibrational mode frequency shift can be used as a tool to observe interstitial C atoms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2842419