Electrostatic force microscopy study about the hole trap in thinnitride/oxide/semiconductor structure

The stoichiometric nitride ( Si N 1.33 ) and Si-rich nitride ( Si N 1.1 ) are characterized by the conductive atomic force microscopy (c-AFM) and electrostatic force microscopy (EFM). Only in Si N 1.1 , EFM is capable of resolving the domains of positive charges with ∼ 10 nm radius. However, the pha...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (13), p.132901-132901-3
Main Authors: Kim, Jong-Hun, Noh, Hyunho, Khim, Z. G., Jeon, Kwang Sun, Park, Young June, Yoo, Hyunseung, Choi, Eunseok, Om, Jaechul
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Summary:The stoichiometric nitride ( Si N 1.33 ) and Si-rich nitride ( Si N 1.1 ) are characterized by the conductive atomic force microscopy (c-AFM) and electrostatic force microscopy (EFM). Only in Si N 1.1 , EFM is capable of resolving the domains of positive charges with ∼ 10 nm radius. However, the phase dependence on the bias elsewhere is similar to that of Si N 1.33 , supporting electron tunneling. The following c-AFM image also exhibits that the local leakage is found exclusively on Si N 1.1 . We suggest that the hole injection which breaks the Si  Si bond occur in the structure with the voltage, increasing the overall conductance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2904646