Interaction between the intrinsic second- and third-order optical fields in an Al 0.53 Ga 0.47 N ∕ Ga N heterostructure

• Published in: Applied physics letters 2008-04, Vol.92 (16), p.161112-161112-3
• Main Authors: Chen, P., Zuo, Y. H., Tu, X. G., Cai, D. J., Li, S. P., Kang, J. Y., Yu, Y. D., Yu, J. Z., Wang, Q. M.
• Format: Article
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2918449

We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al 0.53 Ga 0.47 N ∕ Ga N heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z -scan method and we calculated the built-in dc field on the Al Ga N ∕ Ga N interface to confirm the strong interaction between the intrinsic second- and third-order optical fields.