Synthesis and electrical properties of TiSi 2 nanocables

Uniform Ti Si 2 nanocables were synthesized on large substrates using a simple physical vapor deposition method. X-ray diffraction, scanning electron microscopy, and transmission electronic microscopy were employed to characterize the samples. It reveals that the as-grown Ti Si 2 nanocables are of h...

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Bibliographic Details
Published in:Applied physics letters 2008-06, Vol.92 (25), p.253102-253102-3
Main Authors: Zou, Chenxia, Zhang, Xinzheng, Jing, Guangyin, Zhang, Jingmin, Liao, Zhimin, Yu, Dapeng
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Summary:Uniform Ti Si 2 nanocables were synthesized on large substrates using a simple physical vapor deposition method. X-ray diffraction, scanning electron microscopy, and transmission electronic microscopy were employed to characterize the samples. It reveals that the as-grown Ti Si 2 nanocables are of high quality single crystal inside with thin amorphous Si O 2 sheathing layer. Electrical properties of these core-shell structure nanowires are also presented. Insulativity of the outer layer and stable metallic characters of the inside single crystal Ti Si 2 were observed. Moreover, carrying capacity of current density is up to 10 11 A ∕ m 2 . The nanoscale structure and excellent electrical performance make the Ti Si 2 nanocables good candidate for electrical interconnection in potential nanodevices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2948897