Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiatedby a long C O 2 laser pulse

The effect of pulse duration on in-band (2% bandwidth) conversion efficiency (CE) from a C O 2 laser to 13.5 nm extreme ultraviolet (EUV) light was investigated for Sn plasma. It was found that high in-band CE, 2.6%, is consistently obtained using a C O 2 laser with pulse durations from 25 to 110 ns...

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Bibliographic Details
Published in:Applied physics letters 2008-06, Vol.92 (25), p.251501-251501-3
Main Authors: Tao, Y., Tillack, M. S., Sequoia, K. L., Burdt, R. A., Yuspeh, S., Najmabadi, F.
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Summary:The effect of pulse duration on in-band (2% bandwidth) conversion efficiency (CE) from a C O 2 laser to 13.5 nm extreme ultraviolet (EUV) light was investigated for Sn plasma. It was found that high in-band CE, 2.6%, is consistently obtained using a C O 2 laser with pulse durations from 25 to 110 ns . Employing a long pulse, for example, 110 ns , in a C O 2 laser system used in an EUV lithography source could make the system significantly more efficient, simpler, and cheaper as compared to that using a short pulse of 25 ns or shorter.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2951595