Epitaxial growth of aluminum nitride on AlGaN by reactive sputteringat low temperature

We report the synthesis of 1 μ m thick single crystalline aluminum nitride films by dc magnetron sputtering on Al Ga N ∕ Ga N layer grown on sapphire substrate at low temperature (substrate temperature < 250 ° C ). The microstructure of c -axis oriented AlN films deposited on Si (100) and AlGaN ⟨...

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Published in:Applied physics letters 2008-08, Vol.93 (5), p.052905-052905-3
Main Authors: Duquenne, C., Djouadi, M. A., Tessier, P. Y., Jouan, P. Y., Besland, M. P., Brylinski, C., Aubry, R., Delage, S.
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Summary:We report the synthesis of 1 μ m thick single crystalline aluminum nitride films by dc magnetron sputtering on Al Ga N ∕ Ga N layer grown on sapphire substrate at low temperature (substrate temperature < 250 ° C ). The microstructure of c -axis oriented AlN films deposited on Si (100) and AlGaN ⟨0001⟩ substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface ( 20 - 30 eV ) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 ° C .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2967816