Magnetotransport properties of GaMnAs based trilayer structureswith different thicknesses of InGaAs spacer layer

Magnetotransport properties of Ga Mn As ∕ In Ga As ∕ Ga Mn As trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm . The Hall measurements revealed the systematic change of magnet...

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Bibliographic Details
Published in:Journal of applied physics 2009-02, Vol.105 (7), p.07C505-07C505-3
Main Authors: Lee, Hakjoon, Chung, Sunjae, Lee, Sanghoon, Liu, X., Furdyna, J. K.
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Summary:Magnetotransport properties of Ga Mn As ∕ In Ga As ∕ Ga Mn As trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm . The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3059601