Effect of channel doping concentration and thickness on device performance for In 0.53 Ga 0.47 As metal-oxide-semiconductor transistorswith atomic-layer-deposited Al 2 O 3 dielectrics

We have investigated the channel doping concentration and channel thickness dependence of device performance for In 0.53 Ga 0.47 As metal-oxide-semiconductor transistors with atomic layer deposited Al 2 O 3 dielectrics. We found that undoped channel provides the highest drive current of 125 mA/mm fo...

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Published in:Applied physics letters 2009-03, Vol.94 (9), p.093505-093505-3
Main Authors: Zhao, Han, Zhu, Feng, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.
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Summary:We have investigated the channel doping concentration and channel thickness dependence of device performance for In 0.53 Ga 0.47 As metal-oxide-semiconductor transistors with atomic layer deposited Al 2 O 3 dielectrics. We found that undoped channel provides the highest drive current of 125 mA/mm for 5   μ m gate length. With proper substrate doping concentration ( 5 × 10 16 / cm 3 ) , reasonable subthreshold swing (104 mV/decade) can be achieved for 4.7 nm equivalent oxide thickness. Thinner InGaAs channel exhibits lowest off-current density of 4.0 × 10 − 6   mA / mm .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3093442