Si/SiC bonded wafer: A route to carbon free SiO 2 on SiC

• Published in: Applied physics letters 2009-03, Vol.94 (10), p.103510-103510-3
• Main Authors: Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.
• Format: Article
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3099018

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities ( D it ) . Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900 - 1150 ° C . D it for both partially and completely oxidized silicon layers on SiC were significantly lower than D it values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO 2 , formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO 2 gate oxides.