Nonvolatile memory with switching interfacial polar structures of nanoSi-in-mesoporous silica

We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocry...

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Bibliographic Details
Published in:Applied physics letters 2009-10, Vol.95 (14), p.143501-143501-3
Main Authors: Shieh, Jia-Min, Huang, Jung Y., Yu, Wen-Chien, Huang, Jian-Da, Wang, Yi-Chao, Chen, Ching-Wei, Wang, Chao-Kei, Huang, Wen-Hsien, Cho, An-Thung, Kuo, Hao-Chung, Dai, Bau-Tong, Yang, Fu-Liang, Pan, Ci-Ling
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Summary:We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3240888