Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs / In 0.1 Ga 0.9 As quantum dot (QD) structures grown on graded Si 1 − x Ge x / Si substrate. The QD was found to take on a lens shaped structure with aspect ratio of 0.23 ± 0.05 . Room-tempera...

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Bibliographic Details
Published in:Applied physics letters 2009-10, Vol.95 (14), p.141905-141905-3
Main Authors: Tanoto, H., Yoon, S. F., Lew, K. L., Loke, W. K., Dohrman, C., Fitzgerald, E. A., Tang, L. J.
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Summary:We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs / In 0.1 Ga 0.9 As quantum dot (QD) structures grown on graded Si 1 − x Ge x / Si substrate. The QD was found to take on a lens shaped structure with aspect ratio of 0.23 ± 0.05 . Room-temperature electroluminescence at 1.29   μ m was observed from the QD structures. The external quantum efficiency as function of injected current was investigated and the dominant carrier recombination processes were identified from analysis of the current-optical power relationship.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3243984