Effects of gate-first and gate-last process on interface qualityof In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors usingatomic-layer-deposited Al 2 O 3 and HfO 2 oxides

We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequence of source/drain activation anneal in the process results in remarkable ele...

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Published in:Applied physics letters 2009-12, Vol.95 (25), p.253501-253501-3
Main Authors: Zhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C.
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Summary:We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequence of source/drain activation anneal in the process results in remarkable electrical and physical difference. Applying gate-last process provides significant frequency dispersion reduction and interface trap density reduction for InGaAs MOSCAPs compared to gate-first process. A large amount of In-O, Ga-O, and As-As bonds was observed on InGaAs surface after gate-first process while no detectable interface reaction after gate-last process. Electrical and physical results also show that ALD Al 2 O 3 exhibits better interface quality on InGaAs than HfO 2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3275001