Strain-induced lateral self-organization in Si / SiO 2 nanostructures

We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si / SiO 2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-01, Vol.96 (1), p.013105-013105-3
Main Authors: Tsybeskov, L., Kamenev, B. V., Sirenko, A. A., McCaffrey, J. P., Lockwood, D. J.
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si / SiO 2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3290250