Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO 3 films

Electrical resistivity and magnetotransport are explored for thin (3-30 nm), epitaxial LaNiO 3 films. Films were grown on three different substrates to obtain LaNiO 3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d -band transport is inhibite...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (6), p.062114-062114-3
Main Authors: Son, Junwoo, Moetakef, Pouya, LeBeau, James M., Ouellette, Daniel, Balents, Leon, Allen, S. James, Stemmer, Susanne
Format: Article
Language:English
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Summary:Electrical resistivity and magnetotransport are explored for thin (3-30 nm), epitaxial LaNiO 3 films. Films were grown on three different substrates to obtain LaNiO 3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d -band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is "holelike." Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3309713