Evolution of microstructure and related properties of PbZr 0.4 Ti 0.6 O 3 films on F-doped tin oxide with annealing temperature

• Published in: Journal of applied physics 2010-04, Vol.107 (8), p.084103-084103-4
• Main Authors: Zhang, T., Hu, G. J., Bu, H. J., Wu, J., Chu, J. H., Dai, N.
• Format: Article
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3388013

PbZr 0.4 Ti 0.6 O 3 films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr 0.4 Ti 0.6 O 3 films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at > 550 ° C display a distinguishable layered structure consisting of dense and porous PbZr 0.4 Ti 0.6 O 3 layers. The sample treated at 650 ° C exhibits the largest average remanent polarization of 29.2   μ C / cm 2 and peak reflectivity of 95% among the films. 650 ° C appears to be the best processing condition for the growth of PbZr 0.4 Ti 0.6 O 3 multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.