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Influence of positive bias stress on N 2 O plasma improved InGaZnO thin film transistor

A post-treatment using N 2 O -plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N 2 O -plasma treatment...

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Bibliographic Details
Published in:Applied physics letters 2010-06, Vol.96 (24), p.242105-242105-3
Main Authors: Tsai, Chih-Tsung, Chang, Ting-Chang, Chen, Shih-Ching, Lo, Ikai, Tsao, Shu-Wei, Hung, Ming-Chin, Chang, Jiun-Jye, Wu, Chen-Yi, Huang, Chun-Yao
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Summary:A post-treatment using N 2 O -plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N 2 O -plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% ( N 2 O -plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3453870