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Influence of positive bias stress on N 2 O plasma improved InGaZnO thin film transistor
A post-treatment using N 2 O -plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N 2 O -plasma treatment...
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Published in: | Applied physics letters 2010-06, Vol.96 (24), p.242105-242105-3 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | A post-treatment using
N
2
O
-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after
N
2
O
-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (
N
2
O
-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3453870 |