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Relation between the barrier interface and the built-in potentialin pentacene/ C 60 solar cell
The mechanisms limiting the dark current in pentacene (Pc)/ C 60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined...
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Published in: | Applied physics letters 2010-07, Vol.97 (1), p.013305-013305-3 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The mechanisms limiting the dark current in pentacene (Pc)/
C
60
solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/
C
60
solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3456393 |