Integration of HfO 2 on Si/SiC heterojunctions for the gate architectureof SiC power devices

In this paper we present a method for integrating HfO 2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO 2 on Si, SiC, Si/SiC, and SiO 2 / SiC have been fabricated and electrically tested. The HfO 2 / Si / SiC capacitors min...

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Published in:Applied physics letters 2010-07, Vol.97 (1), p.013506-013506-3
Main Authors: Gammon, P. M., Pérez-Tomás, A., Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, J. A., Mawby, P. A.
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Summary:In this paper we present a method for integrating HfO 2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO 2 on Si, SiC, Si/SiC, and SiO 2 / SiC have been fabricated and electrically tested. The HfO 2 / Si / SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3462932