A TiAl 2 O 5 nanocrystal charge trap memory device

A charge trapping memory device using Ti 0.2 Al 0.8 O x film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl 2 O 5 nanocrystals are precipitated from the phase separation of Ti 0.2 Al 0.8 O x film annealed a...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (14), p.143504-143504-3
Main Authors: Zhou, Yue, Yin, Jiang, Xu, Hanni, Xia, Yidong, Liu, Zhiguo, Li, Aidong, Gong, Youpin, Pu, Lin, Yan, Feng, Shi, Yi
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Summary:A charge trapping memory device using Ti 0.2 Al 0.8 O x film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl 2 O 5 nanocrystals are precipitated from the phase separation of Ti 0.2 Al 0.8 O x film annealed at 900 ° C . A memory window of 2.3 V and a stored electron density of 1 × 10 13 / cm 2 were obtained. Good retention characteristics of the memory device at 80 ° C were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3496437