Carrier localization in m -plane InGaN/GaN quantum wells probedby scanning near field optical spectroscopy

Scanning near field optical microscopy (SNOM) was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m -plane GaN substrates. Dual localization potential consisting of hundreds of nanometers- to micrometer-size areas as well as smaller localizatio...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (15), p.151106-151106-3
Main Authors: Liuolia, V., Pinos, A., Marcinkevičius, S., Lin, Y. D., Ohta, H., DenBaars, S. P., Nakamura, S.
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Scanning near field optical microscopy (SNOM) was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m -plane GaN substrates. Dual localization potential consisting of hundreds of nanometers- to micrometer-size areas as well as smaller localization centers were identified from the SNOM scans and near field photoluminescence spectral widths. The localization areas were found to align along the [0001] direction, which was attributed to partial strain relaxation at the monolayer steps.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3502482