Amorphous indium-gallium-zinc-oxide visible-light phototransistorwith a polymeric light absorption layer

This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide ( a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p - n junction diode. The p - n junction...

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Published in:Applied physics letters 2010-11, Vol.97 (20), p.203506-203506-3
Main Authors: Zan, Hsiao-Wen, Chen, Wei-Tsung, Hsueh, Hsiu-Wen, Kao, Shih-Chin, Ku, Ming-Che, Tsai, Chuang-Chuang, Meng, Hsin-Fei
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Summary:This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide ( a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p - n junction diode. The p - n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3517506