UV nanoimprint lithography for the realization of large-area orderedSiGe/Si(001) island arrays

We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3 × 3   mm 2 and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based stat...

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Bibliographic Details
Published in:Applied physics letters 2011-04, Vol.98 (14), p.143101-143101-3
Main Authors: Lausecker, E., Brehm, M., Grydlik, M., Hackl, F., Bergmair, I., Mühlberger, M., Fromherz, T., Schäffler, F., Bauer, G.
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Summary:We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3 × 3   mm 2 and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based statistics reveals an extremely uniform size distribution of the islands in the patterned areas. These results are confirmed by very narrow and uniform PL peaks recorded at various positions across the patterned arrays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3575554