Electrical passivation and chemical functionalization of SiC surfacesby chlorine termination

We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6 H - SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in oxy...

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Published in:Applied physics letters 2011-05, Vol.98 (18), p.182106-182106-3
Main Authors: Schoell, S. J., Howgate, J., Hoeb, M., Auernhammer, M., Garrido, J. A., Stutzmann, M., Brandt, M. S., Sharp, I. D.
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Summary:We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6 H - SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in oxygen, and a corresponding rise of chlorine core level intensities, following halogen termination. Contact potential difference and surface photovoltage measurements show formation of negative surface dipoles and approximately flat band surface potentials after chlorine termina tion of (0001) n-type 6 H - SiC (built-in voltage V b i < 20   meV ). Starting from halogenated surfaces, we demonstrate both ultraviolet light-induced and thermally-induced functionalization with alkene-derived self-assembled organic monolayers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3587767