Self-organization of mesoscopically ordered parallel Gd-silicidenanowire arrays on a Si ( 110 ) - 16 × 2 surface: A massively parallelactive architecture

A perfect self-organization of large-area, highly regular parallel arrays, consisting of uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical periodicity as small as ∼ 4   nm and ∼ 7.2   nm , respectively, and an average length exceeding 1   μ m , has been achieved...

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Published in:Applied physics letters 2011-05, Vol.98 (19), p.193118-193118-3
Main Authors: Hong, Ie-Hong, Tsai, Yung-Feng, Chen, Tsung-Ming
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Summary:A perfect self-organization of large-area, highly regular parallel arrays, consisting of uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical periodicity as small as ∼ 4   nm and ∼ 7.2   nm , respectively, and an average length exceeding 1   μ m , has been achieved through the heteroepitaxial growth of Gd silicides on a Si ( 110 ) - 16 × 2 surface. Scanning tunneling microscopy/spectroscopy studies clearly show that each metallic Gd-silicide nanowire consists of three atomically precise chain structures with a peculiar charge arrangement of alternating filled and empty states. This unique, massively parallel active architecture of well-ordered Gd-silicide NWs with exotic electronic properties can be exploited in nanoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3590199