Reduced leakage current in BiFeO 3 thin films with rectifying contacts

BiFeO 3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the...

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (23), p.232901-232901-3
Main Authors: Shuai, Yao, Zhou, Shengqiang, Streit, Stephan, Reuther, Helfried, Bürger, Danilo, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie
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Summary:BiFeO 3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present letter, we show that only the growth rate of the BiFeO 3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3597794