Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO 2 / GeO 2 bilayer passivation

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO 2 / GeO 2 bilayer passivation. PMA at 450 ° C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0....

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (25), p.252102-252102-3
Main Authors: Nakashima, Hiroshi, Iwamura, Yoshiaki, Sakamoto, Keita, Wang, Dong, Hirayama, Kana, Yamamoto, Keisuke, Yang, Haigui
Format: Article
Language:English
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Summary:The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO 2 / GeO 2 bilayer passivation. PMA at 450 ° C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to + 0.23   V , resulting from a decrease in the dipole at the SiO 2 / GeO 2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6 × 10 11 to 2.5 × 10 11   cm − 2 eV − 1 , as results of the nitrogen termination of defects at the SiO 2 / GeO 2 interface and/or in the GeO 2 interlayer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3601480