Anomalous electron transport in back-gated field-effect transistors with TiTe 2 semimetal thin-film channels

The authors report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe 2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au m...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (4), p.043109-043109-4
Main Authors: Khan, J., Nolen, C. M., Teweldebrhan, D., Wickramaratne, D., Lake, R. K., Balandin, A. A.
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe 2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO 2 /Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3679679