Vertically integrated submicron amorphous-In 2 Ga 2 ZnO 7 thin film transistor using a low temperature process

In this work, vertically integrated amorphous-In 2 Ga 2 ZnO 7 (a-IGZO) thin film transistors (V-TFTs) with 310nm channel length were fabricated using a low temperature process (

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Bibliographic Details
Published in:Applied physics letters 2012-05, Vol.100 (20), p.203510-203510-5
Main Authors: Ho Rha, Sang, Jung, Jisim, Soo Jung, Yoon, Jang Chung, Yoon, Ki Kim, Un, Suk Hwang, Eun, Keon Park, Byoung, Joo Park, Tae, Choi, Jung-Hae, Seong Hwang, Cheol
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Summary:In this work, vertically integrated amorphous-In 2 Ga 2 ZnO 7 (a-IGZO) thin film transistors (V-TFTs) with 310nm channel length were fabricated using a low temperature process (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4717621