Resistive switching properties of amorphous Pr 0.7 Ca 0.3 MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Amorphous Pr 0.7 Ca 0.3 MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530nm. The Pt/...

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Published in:Applied physics letters 2012-05, Vol.100 (21), p.212111-212111-4
Main Authors: Seong, Tae-Geun, Bum Choi, Kyu, Seo, In-Tae, Oh, Joon-Ho, Won Moon, Ji, Hong, Kwon, Nahm, Sahn
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Summary:Amorphous Pr 0.7 Ca 0.3 MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5 s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4722797