Charge-carrier mediated ferromagnetism in Mo-doped In 2 O 3 films

We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at. %) In 2 O 3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. % Mo doping (7.1emu/cm 3 ), after which it rapidly decrease...

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Published in:Applied physics letters 2012-05, Vol.100 (22), p.222409-222409-4
Main Authors: Park, Chang-Yup, You, Chun-Yeol, Jeon, Kun-Rok, Shin, Sung-Chul
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Summary:We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at. %) In 2 O 3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. % Mo doping (7.1emu/cm 3 ), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. % Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In 2 O 3 is ascribed to the indirect exchange interaction mediated by the charge carriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4722928