Heteroepitaxial Ge-on-Si by DC magnetron sputtering

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C....

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Bibliographic Details
Published in:AIP advances 2013-07, Vol.3 (7), p.072108-072108
Main Authors: Steglich, Martin, Patzig, Christian, Berthold, Lutz, Schrempel, Frank, Füchsel, Kevin, Höche, Thomas, Kley, Ernst-Bernhard, Tünnermann, Andreas
Format: Article
Language:English
Subjects:
CONTAMINATION
DEPOSITION
Direct current
DISLOCATIONS
DOPED MATERIALS
ELLIPSOMETRY
EPITAXY
Germanium
GERMANIUM ALLOYS
INTERFACES
Magnetron sputtering
MAGNETRONS
MATERIALS SCIENCE
Nanocrystals
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
Oxides
SILICON ALLOYS
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
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Summary:The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4813841