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Heteroepitaxial Ge-on-Si by DC magnetron sputtering
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C....
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Published in: | AIP advances 2013-07, Vol.3 (7), p.072108-072108 |
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container_title | AIP advances |
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creator | Steglich, Martin Patzig, Christian Berthold, Lutz Schrempel, Frank Füchsel, Kevin Höche, Thomas Kley, Ernst-Bernhard Tünnermann, Andreas |
description | The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed. |
doi_str_mv | 10.1063/1.4813841 |
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subjects | CONTAMINATION DEPOSITION Direct current DISLOCATIONS DOPED MATERIALS ELLIPSOMETRY EPITAXY Germanium GERMANIUM ALLOYS INTERFACES Magnetron sputtering MAGNETRONS MATERIALS SCIENCE Nanocrystals NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES Oxides SILICON ALLOYS SPUTTERING TRANSMISSION ELECTRON MICROSCOPY |
title | Heteroepitaxial Ge-on-Si by DC magnetron sputtering |
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