Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration

Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been...

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Bibliographic Details
Published in:AIP advances 2014-05, Vol.4 (5), p.057131-057131-7
Main Authors: Vagadia, Megha, Ravalia, Ashish, Solanki, P. S., Pandey, Parul, Asokan, K., Kuberkar, D. G.
Format: Article
Language:English
Subjects:
Barium titanates
Carrier density
Electrical properties
Ferroelectric materials
Ferroelectricity
Heterostructures
Leakage current
Memory devices
Silver
Strontium titanates
Zinc oxide
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Summary:Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been observed in ZnO based MFIS heterostructure, which becomes ∼5.0 × 10−6 A/cm2 for MFIS with Al:ZnO channel. Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4880496